GaP1 Gallium Phosphide Etchant for LEDs
Union Etchant International's
(UEI) premium GaP1 Gallium Phosphide etchant is used for light emitting diodes
(LEDs) and matrix arrays with dielectric isolation. It is an ideal etchant for
fabricating the mesa structures required for efficient LED and for separating
the LED to generate alpha numeric displays. GaP1 also removes surface damage
from mechanically polished p-type and n-type gallium phosphide.
The formulation of UEI's
GaP1 Gallium Phosphide Etchant offers many advantageous features and
benefits.
Ensures maximum
production and quality control: GaP1 is designed to give you maximum
control during the production process because it:
- Does not crystallize:
The GaP1 etching solution is amber and does not crystallize at room
temperature, which enables your production staff to more easily observe the
etching process. This added control ensures the quality manufacture of devices
that require precision etched surface layers with decreased leakage
current.
- Promotes more efficient
light yield: GaP1 polishes a variety of crystallographic planes of LED
material, enabling you to control the LED texture. This control increases light
yield by as much as 100 percent over many other formulations on the
market.
- Consistent and
controllable: GaP1 contains a carefully balanced oxidation-reduction
chemical that is stable and has a suitable pH range.
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GaP1 Etchant Properties |
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GaP1 is compatible with a wide variety of materials
including: |
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Si02 (slight
-minimal attack) |
Platinum |
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Ti (slight
-minimal attack) |
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Palladium |
KMER
photoresist |
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Gold |
Hunt's
Waycoat negative resist |
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chrome |
Apiezon W
Wax |
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UEI's GaP1 Etchant
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Features |
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Ensures maximum production and quality
control |
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No crystallization at room temperature |
| - |
Promotes more efficient light yield |
| - |
Consistent and controllable |
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